GTVA261802FC-V1

High Power RF GaN-on-SiC HEMT 170 W, 48 V, 2620 - 2690 MHz

The GTVA261802FC is a 170-watt GaN-on-SiC HEMT D-mode amplifier for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Product Specifications

Part Number
GTVA261802FC-V1
Description
High Power RF GaN-on-SiC HEMT 170 W, 48 V, 2620 - 2690 MHz
Min Frequency (MHz)
2620
Max Frequency(MHz)
2690
P3dB Output Power(W)
170
Gain(dB)
16.8
Efficiency(%)
43
Operating Voltage(V)
48
Package Category
Earless
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Typical Pulsed CW performance; 2690 MHz, 48 V, 10% duty cycle
  • Output power P3dB 170 W
  • Efficiency 65.5 %
  • Gain 15 dB
  • Capable of handling 10:1 VSWR @ 48 V, 180 W (CW) output power
  • Pb-free and RoHS compliant
  • Input matched

Technical Resources

Datasheet


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GTVA261802FC-V1
170W 48V 2620-2690 MHz GaN-SiC HEMT